| PART |
Description |
Maker |
| MGFC36V5867 |
5.8-6.75GHz BAND 4W INTERNALLY MATCHED GaAs FET
|
Mitsubishi Electric Semiconductor
|
| TIM5964-16SL-422 |
IM3=-45 dBc at Pout= 31.5dBm G1dB=8.0dB(min) at 5.85GHz to 6.75GHz
|
Toshiba Semiconductor
|
| SKY77607 |
Multiband Multimode Power Amplifier Module for Quad-Band GSM / EDGE and Dual-Band (Band I and VIII) WCDMA / HSDPA / HSUPA / HSPA Handsets
|
Skyworks Solutions Inc.
|
| CHV2242A CHV2242A-99F_00 CHV2242A-99F/00 |
Q-band VCO based on Ku-band Oscillator and Q-band Multiplier
|
UMS[United Monolithic Semiconductors]
|
| AWT6108 AWT6108M10P8 |
This quad band power amplifier module is designed to support dual, tri and quad band applications.
Power Amplifiers
Quad Band Power Amplifier Module 824 MHz - 849 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
Anadigics Inc
ANADIGICS, Inc.
|
| BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET
L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
| FLM7785-6F |
C BAND, GaAs, N-CHANNEL, RF POWER, JFET
C-Band Internally Matched FET
|
EUDYNA[Eudyna Devices Inc]
|
| FLM0910-15F |
X BAND, GaAs, N-CHANNEL, RF POWER, JFET
X-Band Internally Matched FET
|
Eudyna Devices Inc
SUMITOMO ELECTRIC DEVICE INNOVATIONS, INC.
|
| TQS5200 |
SPDT Switch for Single- band and Dual-band, 802.11a/b/g Systems
|
TRIQUINT[TriQuint Semiconductor]
|
| LQP03TN8N2H04 AN26027A13 GRM33B30J104KE18 GRM033B1 |
Ultra small, Low NF, Single Band LNA-IC for 600 MHz Band Applications
|
Panasonic Battery Group
|
| KF468V KF468S |
400MHz Band(50ohm)
SPECIFICATIONS FOR SAW FILTER(BAND PASS FILTERS FOR THE RECEIVING RF CIRCUITS OF PAGER)
|
Korea Electronics (KEC)
KEC[KEC(Korea Electronics)]
|
